Threshold Selector and Capacitive Coupled Assist Techniques for Write Voltage Reduction in Metal–Ferroelectric–Metal Field-Effect Transistor

IEEE Transactions on Electron Devices(2021)

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摘要
We propose device and circuit assist techniques to lower the ferroelectric–metal field-effect transistor (FeMFET) write voltage while lowering the effect of depolarizing field. A bipolar threshold selector (TS) is connected between the intermediate node of a FeMFET and ${V}_{\text {SS}}$ , which provides a low-impedance bypass...
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关键词
Iron,MOSFET,Capacitors,FeFETs,Couplings,Logic gates,Mathematical models
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