The GaAs-based p-i-n photodetector using in glucose detection.

In this study, we designed a structure of GaAs-based band-pass PD to use in glucose measurement. That had high EQE (84.63%) and short FWHM (74 nm) in 3V, limiting the absorbed range in a specific range and remove other noise influences. The glucose measurement was designed as a scattering method, which composition of an IR light-emitting diode (LED) and a GaAs-based band-pass PD Even with reduced glucose concentration from 3 % to 1 %, the result still exhibited a stable trend correspond to high glucose concentration.