Analysis of a Failure in High-Voltage VDMOS Device caused by Die Contamination

Zhaoxi Wu,Chao Duan,Zhiming Ding,Yaning Wu,Rui Cao,Xu Wang,Meng Meng

2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)（2021）

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摘要

Vertical double diffused metal oxide semiconductor (VDMOS) device is one of the most widely used power semiconductor devices. Multiple VDMOS devices for aerospace application failed after reliability tests. The device function was abnormal because drain-source breakdown voltage (BVDSS) and zero gate voltage leakage current (IDSS) were out of tolerance. Failure analysis and defect localization meth...

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关键词

Location awareness,Surface contamination,Microscopy,Failure analysis,Surface morphology,Morphology,Ions

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