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Direct Measurement of Internal and External Quantum Efficiency in InGaN Quantum-Well Active Layers

Keito Mori,Yuchi Takahashi,Shigeta Sakai,Yuya Morimoto,Atsushi A. Yamaguchi,Susumu Kusanagi,Yuya Kanitani,Yoshihiro Kudo,Shigetaka Tomiya

2021 27th International Semiconductor Laser Conference (ISLC)（2021）

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Abstract
Internal quantum efficiency (IQE) in InGaN quantum-well active layers have been estimated by simultaneous photoacoustic and photoluminescence measurements. Furthermore, external quantum efficiency has been estimated for the same samples by the integrating-sphere method, and the results have been compared with IQE values.
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Key words
Semiconductor device measurement,Semiconductor lasers,Quantum wells,Measurement by laser beam,Photoluminescence
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