1.3μm InGaAsP/InP semiconductor optical amplifier compatible with an active/passive integration technology
2021 27th International Semiconductor Laser Conference (ISLC)（2021）
Abstract
We present our latest results on 1300 nm band optical amplifiers and Fabry-Perot lasers in the development of a 1300nm active\passive photonic integration platform on InP. Modal gain, material transparency, temperature dependence are reported and analyzed for amplifiers that are optimized for low butt-joint reflections.
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Key words
Semiconductor optical amplifiers,Temperature dependence,Reflection,Fabry-Perot,III-V semiconductor materials,Indium phosphide,Photonics
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