38-fJ/bit Direct Modulation of a 5-μm-long Active Region Membrane DBR Laser on SiO 2 /Si Substrate

Erina Kanno,Koji Takeda,Takuro Fujii,Takaaki Kakitsuka,Shinji Matsuo

2021 27th International Semiconductor Laser Conference (ISLC)（2021）

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Abstract

We fabricated a 5-μm-long active region DBR laser integrated with a spot-size convertor on a SiO2/Si substrate. The device exhibits a threshold current of 51 μA, maximum fiber coupled output power of 76 μW, and 38-fJ/bit energy cost with 25.8-Gbit/s NRZ signal modulation.

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Key words

Costs,Semiconductor lasers,Power lasers,Modulation,Threshold current,Distributed Bragg reflectors,Optical signal processing

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