Low Energy and Error Resilient SOT-MRAM based FPGA LUT Cell

As process technology scales down, large standby power has become one of the critical issues for SRAM-based Lookup-Table (LUT). Recently, spin-orbit torque magnetic random access memory (SOT-MRAM) has become a promising candidate to replace SRAM based LUT. Thanks to its non-volatile characteristic, SOT-MRAM is expected to reduce power consumption. But, high write energy and read reliability issue ...