Memory operating method

A memory operating method is disclosed including following operations. A first signal is applied to memory cells in a memory device, to adjust resistance values of the memory cells. After the first signal is applied, a second signal is applied to the memory cells other than the first memory cell, to further adjust the resistance values of the plurality of memory cells other than the first memory cell. After the second signal is applied, data corresponding to the first predetermined resistance value and the second predetermined resistance value is stored in the first memory cell and the second memory cell, respectively. The first signal is configured for controlling a first memory cell in the memory cells to have a first predetermined resistance value. The second signal is configured for controlling a second memory cell in the memory cells to have a second predetermined resistance value.