Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure

Chen Sun,Zijie Zheng,Kaizhen Han,Subhranu Samanta,Jiuren Zhou,Qiwen Kong,Jishen Zhang,Haiwen Xu,Annie Kumar,Chengkuan Wang,Xiao Gong

IEEE Electron Device Letters（2021）

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Abstract

We report the temperature-dependent operation of back-end-of-line (BEOL) compatible amorphous indium-gallium-zinc-oxide ( ${a}$ -IGZO) ferroelectric thin-film transistors (FeTFTs) with a large memory window (MW) more than 3 V. Our ${a}$ -IGZO FeTFTs have a ...

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Key words

Temperature measurement,Hafnium oxide,Voltage measurement,Switches,Semiconductor device measurement,Logic gates,Annealing

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