Gas Sensing Behavior Of Zno Toward H-2 At Temperatures Below 300 Degrees C And Its Dependence On Humidity And Pt-Decoration
APPLIED SURFACE SCIENCE(2021)
Abstract
The sensing reaction mechanism of ZnO toward H-2 was studied, and the effect of humidity and Pt decoration on the sensor performance was also investigated. Sputter-deposited ZnO thin films exhibit a distinct sensing response to H-2 at temperatures above 150 degrees C. An inverse V-shape response feature may develop upon the H-2 exposure depending on the H-2 concentration and the working temperature. The characteristic response feature results from a series of surface processes occurring on the ZnO surface, including ZnO reduction, Zn nanocluster growth, O-2 adsorption on Zn nanoclusters and reoxidation of the nanoclusters. The sensor response to H-2 is greatly deteriorated in humid ambient. However, the sensor shows a response enhancement toward humid H-2 gas mixtures if the sensor surface is prepared to be initially free from H2O adspecies. This suggests that coexistence of hydrogen and water adspecies on the ZnO surface improves the sensor response to H-2. When the ZnO thin film is decorated with Pt nanoparticles, the sensor performance is greatly improved both in dry and in humid environments. The improvement is proposed to result from hydrogen spillover from Pt nanoparticles to the ZnO support, which enhances the reaction rate of ZnO reduction by hydrogen adatoms.
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Key words
ZnO, Hydrogen, Metal oxide semiconductor (MOS) gas sensor, Humidity, Pt decoration
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