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Impact of vacuum on the resistive switching in HfO2-based conductive-bridge RAM with highly-doped silicon bottom electrode

Khaled Humood,Sueda Saylan,Maguy Abi Aaoude,Baker Mohammad,Florent Ravaux

Materials Science and Engineering: B（2021）

Cited 4|Views1
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Abstract
•Vacuum influences the resistive switching in HfO2-based CBRAM.•The “erase” operation in vacuum shows a parasitic SET (N-SET).•The onset of the parasitic SET is influenced by moisture desorption.•Oxygen vacancy/partially ruptured metallic filaments likely control the N-SET.•Vacuum effect can be prevented by encapsulation and reversed by gas passivation.
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Key words
Memristor,Electrochemical metallization,Hafnium oxide,Highly doped silicon,Atmospheric and vacuum environment
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