Influence of morphology and chemical surface composition on electrical conductivity of SiC microspheres

Ilona Pleșa,Simone Radl,Uwe Schichler,Franz Ramsauer,Werner Ladstätter, Irmgard Bergmann,Wolfgang Kern,Sandra Schlögl

Surface Science（2022）

Cited 1|Views4

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Abstract

•Electrical resistivity of spherically shaped SiC microspheres is studied.•An insulating SiO2 layer is formed at an annealing temperature of 650 °C.•Densely sintered SiC particles show non-linear current-voltage behavior.•Porous SiC particles follow linear current-voltage characteristics.•The immobilization of organosilanes leads to a higher volume resistivity.

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Key words

SiC microspheres,Electrical properties,Surface modification,Thermal annealing

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