Comparative Study of Monolithic Integrated MMI-Coupler-Based Dual-Wavelength Lasers
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS(2022)
Abstract
We present AlCaAs-based monolithically integrated dual-wavelength lasers and master-oscillator power-amplifiers emitting around 785 nm which combine a near diffraction limited beam quality with single longitudinal mode emission, both achieved over a wide range of output powers. This holds for alternating dual wavelength operation which is of interest for applications in spectroscopy as well as for simultaneous dual wavelength operation which can he used to generate THz-radiation. Compared to previous designs the lateral optical confinement is provided by two differently deep etched ridge waveguides. Shallow etching is used in lasing and amplifying sections to ensure single-lateral mode operation, whereas deep etching is employed to form more compact S-bends and to enable the use of multi-mode interference (MMI) couplers instead of Y-couplers.
MoreTranslated text
Key words
Diode lasers,quantum well lasers,integrated optoelectronics,gallium arsenide,spectroscopy,terahertz radiation
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined