Buried Inp/Airhole Photonic-Crystal Surface-Emitting Lasers

Herein, the fabrication of InP photonic-crystal surface-emitting lasers (PCSELs) using a buried airhole/InP photonic-crystal (PC) layer based on an epitaxial regrowth process is reported. The formation of PC voids in the InP crystal structure requires a precise tuning of the metal-organic vapor-phase epitaxy (MOVPE) growth parameters, where the regrowth evolution is a function of temperature, V/III ratio, and growth rate. With precise control of these parameters, it is possible to alter the airhole shape from complete infilling to perfect encapsulation. Low-threshold lasing is demonstrated from these encapsulated airhole regrown PCSELs using optical pumping.