Gan-Nanopillar-Based Light-Emitting Diodes Directly Grown On Multi-Crystalline Si Substrates

AIP ADVANCES(2021)

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摘要
For the first time, light-emitting diodes based on gallium nitride nanopillar crystals were prepared directly on a multi-crystalline silicon substrate, which is widely utilized in low-cost solar cells. Several double-hetero-p-n-junction structures were fabricated, and bright light emission was obtained from the diodes. In addition, white-light emission was observed in another diode. The multi-crystalline Si substrate can be added to a candidate substrate to realize practical, novel, large-area light-emitting devices. (c) 2021 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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