Growth And Nitridation Of Beta-Ga2o3 Thin Films By Sol-Gel Spin-Coating Epitaxy With Post-Annealing Process

beta-Ga2O3 thin films have been successfully prepared on (0001) sapphire substrate by simple and effective sol-gel spin-coating method with post-annealing process (SSP). The effects of different preheating temperatures on the crystal quality and surface morphology of beta-Ga2O3 films have been systematically investigated. The beta-Ga2O3 thin films exhibit good crystallinity with ((2) over bar 01) preferred orientation and smooth surface morphology. The results showed that beta-Ga2O3 thin films directly grown on (0001) sapphire by SSP method have comparable or better crystal quality compared with other epitaxial methods. The beta-Ga2O3 thin films annealed at 1000 degrees C with the preheating temperature of 300 degrees C and above have smooth and crack-free surface morphology. The single-domain-growth mode of beta-Ga2O3 thin film prepared on similar to 7 degrees off-angled (0001) sapphire substrate toward <11<(2)over bar>0> plane has been confirmed by SSP method, and the porous GaN layers have been obtained by the nitridation of the Sol-Gel grown beta-Ga2O3 thin films for future applications in high-quality free-standing GaN substrates.[GRAPHICS].