Construction of Dual-tight Contact Interface in Z-scheme System of In₂O₃/O_V/In₂S₃ for Enhancing Photocatalytic Performance

The novel Z-scheme photocatalytic system of In2O3/O-V/In2S3 has been obtained by a facile two-step in situ deposition method, where oxygen vacancies and In2S3 are in situ located on the surface of In2O3 in sequence. In such a photocatalytic system, oxygen vacancy anchored tightly on the surface of In2O3 serves as an electron mediator, efficiently extracting electrons from In2O3 and modulating the electron transfer paths to facilize constructing a Z-scheme system. Due to the presence of another tight contact interface between the In2O3 and In2S3, the transfer rate of electrons from In2O3 to In2S3 can be further accelerated. Therefore, the synergistic effect of the above-mentioned dual-tight contact interface over In2O3/O-V/In2S3 Z-scheme system simultaneously enhances the charge separation and transfer, resulting in the high performance of photocatalytic H-2 evolution.