Effect of Hole Effective Mass and Carrier Concentration on the Conductivity of a Transparent p-Type LaCuOS Semiconductor with Good Transmittance in Both Visible and Mid-Infrared Ranges

The development of advanced transparent electrical devices has created an urgent demand for wide-bandgap transparent semiconductors. Herein, a simple, low-cost ink-based method for preparation of LaCuOS is introduced. High transmittances of above 60% and 65% at visible (380-750 nm) and mid-infrared (3-5 mu m) wavelengths, respectively, are obtained with LaCuOS films prepared using this ink. With these films, the carrier concentration is above 10(18) cm(-3), while a conductivity of 5 S cm(-1) is obtained, electrical properties that are both higher than those of most transparent p-type semiconductors. From density functional theory calculations, it is surmised that the improved conductivity of the LaCuOS is a result of its high carrier concentration, and its hole effective mass, which is smaller than that of typical transparent p-type semiconductors.