Physico-chemical model for dopant charge state conversion during Ti:sapphire crystal growth

Journal of Crystal Growth（2021）

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摘要

•Original model for valence and concentration of doping ions in oxide growth.•Ti3+ to Ti4+ conversion is controlled byVAl''' diffusion and chemical reaction.•Numerical simulation is used to study the proposed model.•Preliminary simulation shows a qualitative agreement with experimental results.

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关键词

A1. Computer simulation,A1. Doping,A1. Diffusion,A1. Point defects,A2. Single crystal growth,B1. Sapphire

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