Electrical properties of a single Ni-contact SnO2 nanowire field-effect transistors
Materials Letters（2021）
Abstract
•Mobility of a single Ni-contact SnO2 nanowire field-effect transistors is 73.3 ± 4.17 cm2/V-s.•Barrier height between Ni contact and SnO2 nanowire is 45.6 meV.•On/off ratio of Ni-SnO2 field-effect transistor is as high as ~106.
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Key words
Semiconductors,Electrical properties,SnO2,Nickel,Nanowire
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