Temperature-dependent Raman and photoluminescence of β-Ga2O3 doped with shallow donors and deep acceptors impurities
Journal of Alloys and Compounds（2021）
Abstract
•The ion doping of β-Ga2O3 with shallow donor Si and deep acceptor Mg impurities is conducted using EFG method.•The temperature-dependent Raman spectra of β-Ga2O3 doped with shallow donor and deep acceptor impurities are explored.•Study on temperature-dependent PL caused by doping of shallow donor Si and deep acceptor Mg impurities.
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Key words
Shallow donors,Deep acceptors,β-Ga2O3,Temperature-dependent,Raman and photoluminescence spectroscopy
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