Micro-Raman scattering and Time Resolved Luminescence of InGaN Thin Films Grown on GaN/Sapphire by MOCVD

Chong Chen,Deng Xie,Hailong Wang,Zhi Ren Qiu,Hao Jiang,Jinyu Li,Yuhao Ren,Hai Zhu

2017 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP)（2017）

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摘要

Indium cluster in InGaN epilayers prepared with different H ₂ -treating times was investigated. In cluster with the form of lower atom bonds was evidenced by Raman spectra. Carrier lifetime was found to increase with the H ₂ -treating time.

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关键词

microRaman scattering,time resolved luminescence,MOCVD,indium cluster,InGaN epilayers,Raman spectra,carrier lifetime,thin films,InGaN

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