Logic gates based on neuristors made from two-dimensional materials

NATURE ELECTRONICS(2021)

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摘要
A single biological neuron can efficiently perform Boolean operations. Artificial neuromorphic systems, on the other hand, typically require several devices to complete a single operation. Here, we show that neuristors that exploit the intrinsic polarity of two-dimensional materials can perform logic operations in a single device. XNOR gates can be made using ambipolar tungsten diselenide (WSe 2 ), NOR gates using p-type black phosphorus, and OR and AND gates using n-type molybdenum disulfide (MoS 2 ) of different thicknesses. To illustrate the potential of the neuristors, we fabricate logic half-adder and parity-checker circuits using a WSe 2 neuristor and a MoS 2 neuristor in a two-transistor two-resistor configuration, offering an area saving of 78% compared to circuits based on MoS 2 gates in a traditional design. We also propose a binary neural network that is based on a three-dimensional XNOR array, which simulations show should offer an energy efficiency of 622.35 tera-operations per second per watt and a power consumption of 7.31 mW.
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关键词
Electrical and electronic engineering,Electronic devices,Materials for devices,Two-dimensional materials,Electrical Engineering
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