Drift-Diffusion Ingan/Gan Solar Cell Simulator With Optical Management

2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)(2017)

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摘要
This work reports development of an InGaN/GaN hetero-structure solar cell simulator by coupling Drift-Diffusion (DD) equations for describing electrical transport and Transfer Matrix Method (TMM) for the optical solver, respectively. A tri-layer Anti-Reflection Coating (ARC) is optimized from 300 to 1200 nm based on TMM to reduce front reflection loss. This broadband ARC could be used for InGaN multi-junction solar cells or hybrid concentrating solar thermal systems in the future. The 2.94 eV InGaN solar cell demonstrates an increase of the conversion efficiency by 23% (relative) under 1 sun AM1.5, room temperature with ARC.
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关键词
High temperature, nitride, multiple quantum wells, photovoltaics, TCAD simulations
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