Failure Induced By A Progressive Defect In Memory Device
ISTFA 2016: CONFERENCE PROCEEDINGS FROM THE 42ND INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS(2016)
Abstract
System failure due to a progressive defect in memory cell array of DRAM was studied with automated test equipment. In order to find out relationship correctable single-bit fault and system failure, memory cells with single-bit fault by a cross defect were selected. After high voltage and temperature stress, a soft cross-defect was changed into a hard cross-defect. Consequentially, invalid operation by a degraded cross-defect causes array-failure. Based on the failure analysis, methods to prevent array-failure are proposed, and applied to DRAM successfully.
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Key words
memory device,progressive defect,failure
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