Diode Lasers With Front Surface High-Order Distributed Bragg Reflector
V INTERNATIONAL SYMPOSIUM ON COHERENT OPTICAL RADIATION OF SEMICONDUCTOR COMPOUNDS AND STRUCTURES(2016)
Abstract
Control of spectral and spatial parameters of semiconductor lasers is a key element of their development and application. Surface integrated high-order distributed Bragg reflector (DBR) is the way to narrow diode laser spectrum preserving the conventional postgrowth process of laser diodes. On the other hand, high-order DBR has specific optical losses, which reduce optical output power. In this work we analyzed these specific optical losses and present design of laser resonator containing short front DBR, that allow to significantly reduce losses. With this approach, slope efficiency was greatly increased in contrast with conventional rear DBR laser diodes and 4 W optical output power with spectral width of less than 3 angstrom was attained.
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Key words
Semiconductor Lasers,Raman Lasers,Vertical-Cavity Surface-Emitting Lasers (VCSELs)
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