Ultra-High Peak Power Laser Diode Arrays And 1ka-Class Low-Swap Drive Electronics

L. Woods, M. Crowley, P. Thiagarajan, E. Ruben, J. Goings,T. Hosoda, M. Rowe, B. Liu, B. Caliva, N. Crapo

COMPONENTS AND PACKAGING FOR LASER SYSTEMS VII(2021)

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摘要
A new type of laser diode bar offering over 1000W peak power at near-infrared wavelengths (770nm to 1100nm) has been developed. Multi-bar arrays with bar-to-bar pitches as low as 470 mu m are assembled creating individual units with over 50kW peak power. Data will be presented showing performance at various operating conditions and pulse modes. Scaled assemblies with common electrical and thermal manifolds offering over 750kW of peak optical power within a small emission area will also be shown. The impact of beam shaping and beam conditioning with micro-optics will be presented. To power these devices, a new breed of drive and pulser electronics have been developed to operate over 1,000A with the voltage necessary to drive 1MW-class scaled assemblies. This presentation will show how an integrated approach to mating drive electronics and the diode arrays lead to optimal performance and significant size, weight, and cost advantages.
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关键词
Semiconductor Lasers,Mid-IR Lasers,Solid-State Lasers,Raman Lasers,Passively Mode-Locked Lasers
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