Analysis of temporal carrier build-up in reconfigurable field-effect transistor

Based on the analysis of the carrier density change of a symmetric gate reconfigurable field-effect transistor that can operate p- or n-type transistors in an integrated circuit (IC), its unique limiting factor, carrier build-up time, is quantitatively derived for operating speed in addition to conventional resistance and capacitance (RC) and transit time effect. Originating from the characteristic of carrier confinement in a channel between two Schottky potential barriers, the carrier build-up time for the operation could take up to similar to 1000 times longer than the transit time across the channel.