Effects Of Hydrogen Annealing Temperature On The Structural And Physical Properties Of In1.925cr0.05cu0.O-025(3) Thin Films

The structural, optical, electrical and magnetic properties of In1.95Cr0.05Cu0.025O3 thin film annealed in hydrogen at different temperature (T-H = 300, 400, 500, and 600 degrees C) were investigated. The film was amorphous at T-H = 300 degrees C and had single phase In2O3 at T-H = 400 degrees C, while mixed phases of In2O3, In and CuCr2O4 were observed at T-H = 500 and 600 degrees C. At T-H = 400 degrees C the film showed semiconducting like behavior. The film's transparency decreased with increasing T-H, and optical band gap decreased from 3.67 eV for film annealed at T-H = 400 degrees C to 3.0 eV for film annealed at T-H = 600 degrees C. The magnetization increased for film annealed at T-H = 400 and 500 degrees C while it disappeared at T-H = 600 degrees C. The structural and physical properties were discussed and compared with that for film annealed in air at T-Air = 500 degrees C.