Passive Geiger Mode Operation Of A Si Two-Photon Absorption Avalanche Photodiode And Its Temperature Dependence

Competition of two-photon and one-photon absorption in Si-APD was studied. Device should be cooled down in order to clearly observe two-photon absorption at low illumination intensity. Passive Geiger mode operation was studied to sensitively detect small number of carriers generated by two-photon absorption. The illumination intensity dependence of the photocurrent pulse count number is well explained by taking into account the two absorption mechanisms and a dead time period that depends on bias voltage.