High-Performance Room-Temperature Extended-Wavelength Inas-Based Middle-Wavelength Infrared Photodetector

Herein, a high-performance room-temperature extended-wavelength InAs-based barrier-type photodetector that operates in the 1.5-3.5 mu m wavelength range is presented. The experimental results show that the uncooled photodetector exhibits a peak responsivity of 1.47 A W-1 at 3 mu m and a peak detectivity as high as 1.6 x 10(10) cm Hz(1/2) W-1 at zero bias, which is 3-10 times higher than that of available commercial InAs photodetectors. The external quantum efficiency at the peak responsivity is approximate to 63%. The nature of the detector's extended spectral response is investigated using numerical computation analyses, which indicate that such improvement is primarily contributed by the InAsSbP window layer.