A Stacked Hybrid Organic/Inorganic Electrochemical Random-Access Memory for Scalable Implementation

Organic semiconductors have emerged as an attractive class of materials for neuromorphic computing applications, particularly in crossbar arrays for artificial neural network (ANN) accelerators. Here, one of the last persistent challenges facing organic materials for adoption in these applications is addressed by developing a fabrication process capable of lithographically patterning vertical, three-terminal electrochemical random-access memories (ECRAMs). Central to the realization of this device architecture is the development of a hybrid electrolyte system: a porous inorganic matrix permeated with an ionic liquid, which enables vertical stacking of the organic semiconductor channel and gate. The resulting stacked hybrid organic/inorganic ECRAMs (SHOEs) exhibit superior dynamic range to comparable lateral devices (>2x), exceptional cycling endurance (>10(9) Write-Read Cycles), low energy switching (2.7 pJ), and can be fabricated with dimensions limited by lithographic resolution. The fabrication process developed allows for independent control over device channel, electrolyte, and gate dimensions, and by reducing channel lengths down to a single micron, the fabricated devices can operate (Write+Read) at >MHz speeds. Further, the hybrid electrolyte design provides an effective means to confine an ionic liquid for use in other electrolyte-gated devices.