Low-temperature LPE growth and characterization of GaAsSb layers for photovoltaic applications

•Metamorphic GaAsSb layers on GaAs have been grown by low-temperature LPE.•The incorporation of Sb in the As- sublattice is found to be 8%.•Temperature-dependent PL measurements revealed localized states in the bandgap.•“Anti-Stokes” shift of ∼60–70 meV found between emission (PL) and absorption (SPV).•Long-wavelength photosensitivity of GaAsSb is extended to 1.2 eV as found by SPV.