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Photoluminescence And Stability Of Sputtered Siox Layers

Seyed Mohammad Ali Hosseini-Saber,Ruslan Muydinov,Najme Ahmadi,Josefa Ibaceta-Jana, Zainab Kazemi,Stefan Seeger,Heiko Gundlach,Ulrich Gernert,Bernd Szyszka,Hans Joachim Eichler

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE（2021）

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Abstract
SiOx layers with thicknesses of about 300-1000 nm are produced by sputtering silicon onto glass and quartz substrates. Silicon is oxidized during deposition, and the refractive index of the sputtered layers vary from 1.63 to 1.86. Oxygen atomic concentration in SiOx is in the range of 1More
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Key words
flash lamp annealing, photoluminescence, Raman spectroscopy, Si nanocrystals, SiOx layers
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