Effect Of Voltages On Gamma-Ray Linear Attenuation Coefficients For Some Semiconductors
RADIATION PHYSICS AND CHEMISTRY(2021)
Abstract
In this work, the change according to the different voltages (0, 5, 10, 15, 20 and, 25 V) of gamma-ray linear attenuation coefficients for GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2 semiconductors have been measured by using an extremely narrow collimated-beam transmission method in the energy 59.54 keV. Gamma-rays of Am-241 were detected by using a high-resolution Si(Li) detector and, energy dispersive X-ray fluorescence spectrometer (EDXRFS). GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTeo(0.8)Se(0.2) semiconductors were grown by the Bridgman-Stockbarger method. There are no cracks or voids on the surface of ingots. Samples were cleaved along the cleavage planes (001). The freshly cleaved crystals have mirror-like surfaces even before using mechanical treatment. Results are presented and discussed in this study.
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Key words
Bridgman/stockbarger, EDXRFS, Semiconductor crystal, Linear attenuation coefficient
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