Hydrogen-assisted low-temperature plasma-enhanced chemical vapor deposition of thin film encapsulation layers for top-emission organic light-emitting diodes

In this work, we developed a single high-performance SiNx encapsulation layer that can be directly integrated into organic devices by low-temperature plasma-enhanced chemical vapor deposition (PECVD). We investigated a hydrogen-assisted low-temperature PECVD process at a temperature of 80 °C. The thin film density improved with an increased hydrogen gas ratio, and the moisture permeability was less than 5 × 10−5 g/m2·day. To verify the stability of the PECVD process, we applied the SiNx encapsulation layer directly to top-emitting organic light-emitting diodes. The results showed minor changes in the current-density–voltage characteristics after the PECVD process, as well as high reliability after a water dipping test.