Fabrication Of Antiferroelectric Nanbo3-Casno3 Film By Pulsed Laser Deposition

In this study, we fabricated a 0.98NaNbO(3)-0.02CaSnO(3) film on SrRuO3 coated (001)SrTiO3 single crystal substrate by pulsed laser deposition. A tiny amount of CaSnO3 alloying into NaNbO3 stabilized the antiferroelectric phase of NaNbO3. The c-axis of stabilized antiferroelectric phase in the 0.98NaNbO(3)-0.02CaSnO(3) film grew along two directions of the in-plane and out-of-plane directions. These two types of antiferroelectric domains contributed to the stabilization of the antiferroelectric phase under a large applied electric field. The 0.98NaNbO(3)-0.02CaSnO(3) film showed antiferroelectric double P-E response even at a high temperature of 180 degrees C and had energy storage property of recoverable energy storage density (W (r)) of 1.7 J cm(-3) and storage efficiency (eta) of 52%.