R/G/B Micro-Leds For In-Pixel Integrated Arrays And Temperature Sensing

In this paper, we demonstrate that nitride-based R/G/B micro-LEDs allow temperature sensing through a forward voltage response on both temperature and display devices. In temperature sensing, micro-LEDs operate in current constant mode, exhibiting an excellent performance with a sensitivity of 2.6/2.7/2.2 mV/K for blue/green InGaN micro-LEDs and red AlGaInP microLED under an injection current density of 1 mA/cm(2), which is about two times lower sensitivity than the sensitivity limit obtained from the Shockley ideal diode equation. It is speculated that the lower sensitivity originated from parasitic resistances. It is also found that the band gaps of ternary InGaN and quaternary AlGaInP obtained from temperature-dependent electroluminescence spectra of red micro-LED agrees with the calculated values by using the semiempirical Varshni relationship. The EL of micro-LEDs is characterized by narrow emission widths of 18-41 nm, leading to wide color gamut covering up to 170/97% of the DCI P3/BT 2020, which are the standard color space of ultrahigh definition television system.