Effect Of 8-Potential On Electron-Momentum Filter Based On Antiparallel Asymmetric Double Delta-Magnetic-Barrier Semiconductor Microstructure

Based on antiparallel asymmetric double delta-magnetic-barrier semiconductor microstructure constructed on the surface of GaAs/Al1-xGaxAs heterostructure by patterning two ferromagnetic stripes, an electron momentum filter was proposed recently. We further explore the effect of a delta-potential realized by the atomic-layer doping technique on this filter device. It is shown that this filter is sensitive to the delta-potential because the effective potential experienced by electrons in the device depends on the delta potential. It is also shown that both magnitude and sign of wave-vector filtering efficiency can be tuned by adjusting weight or position of the delta-potential. Therefore, a controllable electron-momentum filter may be obtained for nanoelectronics device applications.(c) 2021 Elsevier B.V. All rights reserved.