Surface properties enhancement by sulfur-doping TiO2 films

Rodrigo Teixeira Bento,Olandir Vercino Correa,Renato Altobelli Antunes,Marina Fuser Pillis

Materials Research Bulletin（2021）

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摘要

•Exposition of TiO2 films to H2-H2S at 50-150 °C is efficient for sulfur-doping.•Ti4+ ions were substituted by S6+ both in the bulk and in the surface of the films.•Sulfur-doping mechanism of TiO2 films under H2S atmosphere was proposed.•S-doping promoted the dye removal of the TiO2 films under visible light.•0.2, 3 and 8 at.% S-doping showed about 9, 44 and 72%, respectively, of efficiency.

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关键词

Titanium dioxide,MOCVD,Sulfur-doped TiO2,Surface modification,Photocatalysis

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