Real-Time Visualization Of The Cleaning Of Ceria Particles From Silicon Dioxide Films Using Pva Brush Scrubbing

Brush scrubbing is commonly employed for cleaning contaminated polished wafers, especially after chemical mechanical polishing. Here we report the results from real-time video imaging of the brush cleaning of similar to 90 nm ceria particles from thin oxide films on transparent glass substrates using evanescent wave microscopy to identify the interactions among the particles, brush, film and cleaning liquid. Two cleaning liquids, DI water (pH similar to 6) and 0.1 M NH4OH solution at pH similar to 11, were used. It was found that purely hydrodynamic forces are unable to remove the ceria particles from the oxide film surface and direct contact between brush asperities and film is crucial for particle detachment to occur. However, such a direct contact also causes significant particle loading of the brush as well as redeposition of some of the already dislodged particles. Preventing such redeposition is crucial for efficient surface cleaning. The dislodged particles that are transferred into the fluid flow on the film continued to move without redepositing. Since the 0.1 M NH4OH solution at high alkaline pH created an environment for charge repulsion among the ceria particles, PVA brush and oxide film, particle removal from the film is more rapid and somewhat more efficient compared to DI water.