Growth by MOCVD and photoluminescence of semipolar (202¯1¯) InN quantum dashes

Philip Chan,Caroline E. Reilly,Stacia Keller,Steven P. Denbaars,Shuji Nakamura

Journal of Crystal Growth（2021）

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摘要

•Semipolar (202¯1¯) InN quantum dash growth studied at various temperatures and thicknesses.•Room temperature near-infrared photoluminescence captured from uncapped InN quantum dashes between 1350 and 1500 nm.•Quantum dash layers sensitive to GaN cap temperature and growth time.•Room temperature photoluminescence with peak wavelength at 1320 nm from InN quantum dashes with 30 nm GaN cap.

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关键词

A1. Nanostructures,A1. Atomic force microscopy,A3. Metalorganic chemical vapor deposition,B3. Nitrides

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