Znsnxge1-Xn2 As Electron-Selective Contact For Silicon Heterojunction Solar Cells
2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)(2021)
摘要
This work reports the electrical characterization of ZnSnxGe1-xN2 (ZTGN) layers deposited on glass by sputtering and further assesses for the first time the performance of SHJ solar cells featuring them as electron-selective contacts. Bandgap, conductivity, and activation energy were found to significantly change between Sn and Ge-rich samples, but poor performance was observed when ZTGN layers were employed as electron-selective contacts for SHJ solar cells, with similar results despite changes in material properties. A non-moving Fermi level around mid-gap silicon, strong limitation due to series resistance, and poor conductivity of Ge-rich samples can account for the observed behavior. Doping of Ge-rich ZTGN appears thus necessary to build efficient devices with a ZTGN contact layer. Using an ex-situ phosphine palsma followed by annealing did not prove successful to this regard, making in-situ doping probably necessary.
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关键词
ZnSnN2, ZnGeN2, electron-selective, SHJ, nitrides, solar cells
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