Field-Effect Transistor Behavior of Synthesized In 2 O 3 /InP (100) Nanowires via the Vapor–Liquid–Solid Method

We demonstrated the feasibility of using InP (100) substrates, a different indium source, for the synthesis of In 2 O 3 nanowires by the vapor–liquid–solid (VLS) method using a 20-nm-thick Au layer as a catalyst. By varying the thickness of the Au layer and the growth temperature ( T ), the nanowires showed different morphologies. The nanowires grew along the (100) direction and had perfect crystallinity and lengths up to several hundreds of micrometers. The configured field-effect transistor revealed an n -type behavior with 115 μ A of the drain-source current, I DS , under 1.0 V of gate voltage, V DS , at 1.33 × 10 −4 kPa of pressure and temperature of 20°C. This result indicates that it is feasible to use different In sources to synthesize In 2 O 3 nanowires by the VLS method for electronic devices.