8 X 8 Format Ingaas/Inp Avalanche Photodiode Plane Array For 3d Imaging Laser Radar System

This paper reports a planar structure InGaAs/InP avalanche photodetector focal plane arrays. Their material structure use separate absorption, grading, charge and multiplication layer. The pixel pitch of 8 x 8 format detectors is 250 mu m. The breakdown voltage (V-BD) is typically in the range of 65 to 70 V for most of the devices on the same wafer. The typical dark current at 90% of V-BD is 3 nA, dark currents as low as 0.5 nA at 90% of V-BD have also been observed for some diodes, corresponding to a dark current density of 1 x 10(-5) A/cm(2). The photocurrent starts to increase at the "punch-through" voltage V-p of 43 V. The responsivity at 1.55 mu m is 0.91 A/W at unity gain and the multiplication layer is estimated to be 1.2 mu m. Each device on the same wafer has excellent characteristics and high uniformity through measurement, laying a solid foundation for 3D imaging laser radar systems.