Hydrostatic Calibration Of The Piezoresistive Coefficients On 4h Silicon Carbide
PROCEEDINGS OF THE TWENTIETH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2021)(2021)
Abstract
Silicon carbide (SiC) has been shown to be a good alternative to silicon in the development of stress sensors for harsh environments due to its desirable material properties. The piezoresistive behavior of stress sensors is characterized by piezoresistive coefficients, which must be calibrated before use in stress measurement. Four-point bending calibration method can extract only two of the six piezoresistive coefficients which can be used for measurement of in-plane stress components. However, for out-of-plane normal stress measurement, a third piezoresistive coefficient pi(13) is required. This paper discusses the resistive sensor design used for measuring the out-of-plane normal stress component. A hydrostatic test method utilizes a high-capacity pressure vessel to apply a triaxial load to a single die. The changes of resistance of the sensors on the die are collected during the test procedure, and piezoresistive coefficient pi(13) is extracted by combining results from the four-point bending and hydrostatic tests. Errors induced by the off-axis plane are discussed, and the off-axis angle of our sample is determined by electron backscattering diffraction analysis (EBSD).
MoreTranslated text
Key words
piezoresistive coefficient,resistive sensor design,hydrostatic test method,stress sensors,four-point bending calibration method,out-of-plane normal stress measurement component,in-plane stress measurement component,hydrostatic calibration testing,EBSD,electron backscattering diffraction analysis,SiC
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined