Thz Polarization-Dependent Response Of Antenna-Coupled Hgcdte Photoconductors Under An External Constant Electric Field

The photoresponse of antenna-coupled Hg1-xCdxTe (x approximate to 0.201) narrow-gap epitaxially grown photoconductors with normal band ordering having large spin-orbit coupling and being irradiated by the normal to the photoconductor surface terahertz (THz) radiation (linearly or circularly polarized), is investigated at T = 80 and 300 K. The oscillations of polarized photoresponse in biased and unbised structures were revealed. In experiments, Hg1-xCdxTe layers (point group 43m (T-d)) grown on (013) GaAs substrates were used. In biased structures, to the ordinary charge current and Rashba spin splitting current in zero electric field, an additional polarized current, which grows with the external electric field strength, arises. Presumably, the oscillating photoresponses under polarized THz radiation in these unbiased and biased structures are connected with the circular and linear photogalvanic effects without and with an external electric field. The observed features of the polarized dependent photoresponse can be important for spintronics applications at elevated temperatures.