High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped -Ga₂O₃ thin film*

Si-doped beta-Ga2O3 films are fabricated through metal-organic chemical vapor deposition (MOCVD). Solar-blind ultraviolet (UV) photodetector (PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 mA under 200 mu W.cm(-2) 254 nm illumination and +/- 20 V bias, leading to photo-responsivity as high as 788 A.W-1. The Si-doped beta-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.