Enhancement Of Responsivity In Solar-Blind Uv Detector With Back-Gate Mos Structure Fabricated On Beta-Ga2o3 Films

Monoclinic Ga2O3 (beta-Ga2O3) films were grown on Si/SiO2 by using MOCVD. Then, we fabricated the solar-blind photodetector with a back-gate MOS structure. The device exhibited obvious photoresponse under 254-nm UV light illumination, and the photocurrent increased by five orders of magnitude, which could be controlled by V-GS. The current generated under dark conditions could also be regulated by V-GS and tended to constant when the regulation of V-GS was reaching saturation. Meanwhile, V-GS was confirmed to have a certain ability to regulate the photocurrent. The present device demonstrated excellent stability and fast response (rise) and recovery (decay) times under the 254-nm light illumination as well as a responsivity of 417.5 A/W, suggesting a valuable application in solar-blind UV photodetectors.