Stress Effects On Electronic Properties Of Gaas Thin Film
PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART N-JOURNAL OF NANOMATERIALS NANOENGINEERING AND NANOSYSTEMS(2015)
摘要
We have calculated the density of the quantum state in the conduction band (NC) for series stress addition to GaAs thin film along [100], [010] and [001] direction. We present here the results of our investigation of the electronic parameter affected by the stress. Within the range of 0.02-0.2 GPa, we find that the value of NC decreases about 1.0 3 10 21 cm - 3 from the free status of films. The results reveal that the stresses on GaAs film are extremely important and impact its electronic properties.
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关键词
Density of the quantum state, gallium arsenide film, stress effects
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